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October 2001
FDC6333C
30V N & P-Channel PowerTrench ? MOSFETs
General Description
Features
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
? Q1
? Q2
2.5 A, 30V.
–2.0 A, 30V.
R DS(ON) = 95 m ? @ V GS = 10 V
R DS(ON) = 150 m ? @ V GS = 4.5 V
R DS(ON) = 150 m ? @ V GS = –10 V
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
SO-8 and TSSOP-8 packages are impractical.
Applications
? DC/DC converter
? Load switch
? LCD display inverter
R DS(ON) = 220 m ? @ V GS = –4.5 V
? Low gate charge
? High performance trench technology for extremely
low R DS(ON) .
? SuperSOT –6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick).
D1
S1
D2
4
Q2(P)
3
G2
5
2
SuperSOT
Pin 1
TM
-6
G1
S2
6
1
T A =25 C unless otherwise noted
SuperSOT?-6
Absolute Maximum Ratings
o
Q1(N)
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Q1
30
± 16
Q2
–30
± 25
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
2.5
–2.0
A
– Pulsed
8
–8
P D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
0.96
0.9
0.7
W
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
.333
Device
FDC6333C
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2001 Fairchild Semiconductor Corporation
FDC6333C Rev C (W)
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相关代理商/技术参数
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